SSD диск Patriot P220 2TB SATA3 2.5

1024 GB

PCIe 4.0 (NVMe)

NVM Express (NVMe), Phison E18 controller

M.2 2280

Лаптопи

1 TB

Internal

Up to 7450 MB/s

Up to 6900 MB/s

PCIe 4.0 x4 (NVMe)

1 GB Low Power DDR4 SDRAM Cache, TRIM support, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, sleep mode, Samsung V-NAND 3bit MLC Technology, NVMe 2.0, S.M.A.R.T.

M.2 2280

N/A

80 x 22 x 2.3 mm

Max 9 g

1 TB

PCIe 4.0 x4 (NVMe)

Game Mode 2.0, RGB lighting, Adaptive thermal monitoring, overhead balancing, predictive loading, Microsoft DirectStorage API support

M.2 2280

1 TB

PCIe 3.0 x4 (NVMe)

24x7 continuous operation

M.2 2280

Лаптопи

1 024 GB (1 TB)

Internal

Up to 5000 MB/s

Up to 3500 MB/s

NVMe PCIe Gen 4 x4

M.2 (2230)

N/A

30.0 x 22.0 x 2.23 mm

4 g

Обща употреба

1 024 GB (1 TB)

External

Up to 2000 MB/s

Up to 2000 MB/s

USB Type C to USB Type A / USB Type C to USB Type C, USB 3.2 Gen 2x2

Military green

96.5 x 53.6 x 12.5 mm

75 g

1 TB

PCIe 4.0 x4 (NVMe)

Game Mode 2.0, Adaptive thermal monitoring, overhead balancing, predictive loading, Microsoft DirectStorage API support

M.2 2280

Настолни и преносими компютри

2 000 GB (2 TB)

Internal

Up to 7400 MB/s

Up to 6000 MB/s

PCIe Gen 4 x4, Compliant with NVMe 1.4

3D NAND flash

M.2 (2280)

N/A

80 x 22 x 3.43 mm

6.2 g

Лаптопи

1 TB

Internal

Up to 14700 MB/s

Up to 13300 MB/s

PCI Express 5.0 x4 (NVMe)

TRIM support, Auto Garbage Collection Algorithm, Device Sleep support, Samsung V-NAND TLC Technology, integrated heatsink, Intelligent TurboWrite 2.0 Technology, NVMe 2.0, S.M.A.R.T.

M.2 2280

N/A

81.3 x 22.9 x 8.9 mm

9.0 g

Лаптопи

1 TB

Internal

Up to 7450 MB/s

Up to 6900 MB/s

PCIe 4.0 x4 (NVMe)

1 GB Low Power DDR4 SDRAM Cache, Samsung V-NAND 3bit MLC Technology, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, sleep mode, PS5 compatible, NVMe 2.0, S.M.A.R.T.

M.2 2280

N/A

80 x 24.3 x 8.2 mm (with heatsink)

Max 28 g

Лаптопи

1 TB

Internal

Up to 560 MB/s

Up to 530 MB/s

SATA 6Gb/s

3-bit 3D V-NAND Technology, Samsung MKX Controller, TRIM support, Auto Garbage Collection Algorithm, Worldwide Name (WWN), Low Power DDR4 SDRAM Cache, TurboWrite Technology, sleep mode, S.M.A.R.T., 256-bit AES, IEEE 1667

2.5"

N/A

100.0 x 69.9 x 6.8 mm

86 g

2 TB

PCIe 4.0 x4 (NVMe)

Low power consumption

M.2 2280

Настолни и преносими компютри

2 048 GB (2 TB)

Internal

Up to 2,400MB/s

Up to 1,800MB/s

PCIe Gen3 x4

3D NAND flash; Controller: RTS5766DLT

M.2 (2280)

Blue

80 x 22 x 3.13 mm

8 g