Efficient data transferWith internal data rates reaching up to 7250 MBps, data can be transferred swiftly, enabling faster boot times and quicker application load speeds.High durabilityFeaturing a shock resistance of up to 1500 g and a vibration tolerance, this drive is rugged enough to withstand physical stress, ensuring reliable operation in various environments.Advanced performance managementSupports TRIM, Auto Garbage Collection, and Device Sleep to optimize performance and extend the lifespan of the drive, making it suitable for both everyday use and demanding applications.Enhanced security featuresEquipped with 256-bit AES hardware encryption and TCG Opal Encryption 2.0, the drive provides robust security measures to protect sensitive data from unauthorized access.
Спецификации
- Капацитет, GB2 TB
- ИнтерфейсPCIe 5.0 x2 (NVMe)
- ДругиIntelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Device Sleep support, Host Memory Buffer (HMB), TRIM support, Auto Garbage Collection Algorithm, S.M.A.R.T., IEEE 1667
- Форм-факторM.2 2280
- Гаранция, м.60 months

















